Process for treating semiconductors

Cleaning and liquid contact with solids – Processes – Using sequentially applied treating agents

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134 3, 134 37, B08B 308

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050929372

ABSTRACT:
Semiconductors are treated with such surface-treating solutions as ultra-pure water, dilute hydrofluoric acid and an organic solvent and then subjected to removal of the surface-treating solutions remaining on the surface of the semiconductor in an inert gas atmosphere of high purity while contacting the surface of the surface-treated semiconductor only with the inert gas of high purity, whereby contamination with impurities on atom level from the atmosphere can be prevented.

REFERENCES:
patent: 2871110 (1959-01-01), Stead
patent: 4132567 (1979-01-01), Blackwood
patent: 4519846 (1985-05-01), Aigo
Hirofuji et al., "Orientation Dependence of Crystal Defects Formation in Si Molecular Beam Epitaxy," J. Vac. Sci. Technol., B5(1), pp. 10-14, Jan./Feb. 1987.

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