Process for treating semiconductor devices under atomic hydrogen

Details Process for treating semiconductor devices under atomic hydrogen Process for treating semiconductor devices under atomic hydrogen

1980-07-02

1982-05-25

Roy, Upendra

Metal treatment

Compositions

Heat treating

29585, 148187, 2504922, 427 35, 427 38, 357 91, H01L 21263

Patent

active

043314864

ABSTRACT:
The invention relates to a process and to an apparatus for treating semiconductor devices. A hydrogen plasma is created in the vicinity of the semiconductor devices and the positively polarized plasma particles are removed therefrom. A tightly sealed enclosure is provided and contains two plane, parallel electrodes polarized so as to form an anode and a cathode. Heating means are located in the vicinity of the anode.

REFERENCES:
patent: 3582604 (1971-06-01), Bykhovsky
patent: 3790411 (1974-02-01), Simms et al.
patent: 4113514 (1978-09-01), Pankove et al.
patent: 4116721 (1978-09-01), Ning et al.
patent: 4151058 (1979-04-01), Kaplan et al.
patent: 4193003 (1980-03-01), Blanchard et al.
patent: 4224084 (1980-09-01), Pankove
patent: 4239788 (1980-12-01), Beck
patent: 4266986 (1981-05-01), Benton et al.
Ma et al., IEEE-Jour. Solid St. Circuits, SC-13, (4), 1978, p. 445.
Ma et al., Appl. Phys. Letts., 32(7), (1978), 441.

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