Process for treating material in plasma environment

Details Process for treating material in plasma environment Process for treating material in plasma environment

1976-05-14

1981-01-06

Reynolds, B. A.

Electric heating

Metal heating

By arc

156646, 156643, 204192E, B23K 900

Patent

active

042438659

ABSTRACT:
An improved method of fabricating metal-semiconductor interfaces such as Schottky barriers and ohmic contacts. There is disclosed apparatus and method (or process) for chemically converting, etching, or passivating the surface of a material, such as the surface of a silicon wafer, in a gaseous plasma environment consisting of atomic, neutral nitrogen which causes the surface of the material to be resistant to otherwise subsequent nascent surface oxide buildup. This process is particularly useful in manufacture of Schottky diodes, transistors, and other electronic components or discrete and integrated devices requiring high quality metal-semiconductor junctions or interfaces.

REFERENCES:
patent: 2744000 (1956-05-01), Seiler
patent: 3122463 (1964-02-01), Ligenza et al.
patent: 3511727 (1970-05-01), Hays
patent: 3522118 (1970-07-01), Taylor et al.
patent: 3705055 (1972-12-01), Christensen et al.
patent: 3930913 (1976-01-01), Jacob
"Dry Chem. Processes Etches Silicon Dioxide Without Attacking Silicon", 8/1976, `Solid State Technology`, vol. 19, #8, p. 14.

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