Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1997-12-02
1999-11-23
Powell, William
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
438710, 438714, H01L 21302
Patent
active
059900130
ABSTRACT:
A process for treating a semiconductor substrate, comprising a prior surface-treatment step using a plasma at medium or low pressure, preferably having an electron concentration N.sub.e .gtoreq.10.sup.11 cm.sup.-3 and preferably producing a small potential difference V.sub.p -V.sub.f <20 V, wherein the surface energy of the treated surface is determined so as optionally to have fast feedback on the control of the process in order to optimize the plasma treatment, and the prior surface treatment step may be followed by a deposition step with a view to filling or planarizing the treated surface or to improving morphological, physical, or electrical characteristics of materials deposited on the treated surface.
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Thin Solid Films, vol. 222, No. 1/02, Dec. 20, 1992, pp. 126-131, XP000345492 Ramm J. et al: Low-Temperature in Situ Claening of Silicon Wafers with an Ultra High Vacuum Compatible Plasma Source.
Journal of the Electrochemical Society, vol. 141, No. 11, Nov. 1, 1994, pp. 3136-3140, XP000493875 Carter R. J. et al.: "In Situ Remote H-Plasma Cleaning of Patterned SI-SI02 Surfvaces".
Berenguer Marc
Pons Michel
Chen Kin-Chan
France Telecom
Powell William
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