Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Patent
1997-12-24
1999-10-19
Utech, Benjamin
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
438906, 134 2, 134 3, 134 41, 510176, H01L 21306, B08B 308
Patent
active
059688483
ABSTRACT:
This invention relates to a process for rinsing a substrate which has been provided with a desired resist pattern and subjected to an etching treatment, and optionally, subsequent ashing treatment, said process including the steps of: (I) treating said resist pattern with a remover solution which contains, as a principal ingredient, a salt of hydrofluoric acid and a metallic-ion-free base; (II) rinsing said substrate with a rinse solution for lithography which contains ethylene glycol and/or propylene glycol, and a water-soluble organic solvent other than said glycol; and (III) washing said substrate with water.
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Kobayashi Masakazu
Nakayama Toshimasa
Tanabe Masahito
Wakiya Kazumasa
Champagne Donald L.
Tokyo Ohka Kogyo Co. Ltd.
Utech Benjamin
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