Process for treating a lithographic substrate and a rinse soluti

Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching

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438906, 134 2, 134 3, 134 41, 510176, H01L 21306, B08B 308

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active

059688483

ABSTRACT:
This invention relates to a process for rinsing a substrate which has been provided with a desired resist pattern and subjected to an etching treatment, and optionally, subsequent ashing treatment, said process including the steps of: (I) treating said resist pattern with a remover solution which contains, as a principal ingredient, a salt of hydrofluoric acid and a metallic-ion-free base; (II) rinsing said substrate with a rinse solution for lithography which contains ethylene glycol and/or propylene glycol, and a water-soluble organic solvent other than said glycol; and (III) washing said substrate with water.

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