Process for transferring a thin film from an initial substrate o

Details Process for transferring a thin film from an initial substrate o Process for transferring a thin film from an initial substrate o

1997-01-10

1999-11-30

Breneman, Bruce

Etching a substrate: processes

Adhesive or autogenous bonding of two or more...

Removing at least one of the self-sustaining preforms or a...

216 53, 438458, 438691, 438798, 438977, H01L 21302

Patent

active

059936770

ABSTRACT:
A thin film is transferred from an initial substrate onto a final substrate. The process includes the following successive stages: joining of the thin film (112) onto a handle substrate (120) comprising a cleavage zone, elimination of the initial substrate, joining of the thin film (112) with a final substrate (132), and cleavage of the handle substrate (120) following the cleavage zone. The cleavage zone includes a film of micro-bubbles formed by ion implantation. The invention has, in particular, applications in the fabrication of three-dimensional structures of integrated circuits.

REFERENCES:
patent: 5391257 (1995-02-01), Sullivan et al.
patent: 5559043 (1996-09-01), Bruel
patent: 5580407 (1996-12-01), Haisma et al.
patent: 5714395 (1998-02-01), Bruel
patent: 5780354 (1998-07-01), Dekker et al.
patent: 5856229 (1999-01-01), Sakaguchi et al.
Japanese Journal of Applied Physics, Part 2, vol. 23, No. 10, pp. L815-L817, Oct. 1984, Tsuneo Hamaguchi, et al., "Device Layer Transfer Technique Using Chemi-Mechanical Polishing".
9.sup.th Symposium on Future Electron Devices--Nov. 14-15, 1990, pp. 267-272, Yoshihiro Hayashi, "Evaluation of Cubic (Cummulatively Bonded IC) Devices".

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