Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Reexamination Certificate
2010-08-24
2011-11-01
Nguyen, Khiem D (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
C257SE29068, C257SE29104, C438S458000
Reexamination Certificate
active
08049224
ABSTRACT:
Semiconductor wafers having a thin layer of strained semiconductor material. These structures include a substrate; an oxide layer upon the substrate; a silicon carbide (SiC) layer upon the oxide layer, and a strained layer of a semiconductor material in a strained state upon the silicon carbide layer, or a matching layer upon the donor substrate that is made from a material that induces strain in subsequent epitaxially grown layers thereon; a strained layer of a semiconductor material of defined thickness in a strained state; and an insulating or semi-insulating layer upon the strained layer in a thickness that retains the strained state of the strained layer. The insulating or semi-insulating layers are made of silicon carbide or oxides and act to retain strain in the strained layer.
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Bensahel Daniel
Ghyselen Bruno
Skotnicki Thomas
Enad Christine
Nguyen Khiem D
S.O.I.Tec Silicon on Insulator Technologies
Winston & Strawn LLP
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