Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies
Reexamination Certificate
2005-10-11
2005-10-11
Le, Thao P. (Department: 2818)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Subsequent separation into plural bodies
C438S478000
Reexamination Certificate
active
06953736
ABSTRACT:
The invention relates to a process for producing an electronic structure that includes a thin layer of strained semiconductor material from a donor wafer. The donor wafer has a lattice parameter matching layer that includes an upper layer of a semiconductor material having a first lattice parameter and a film of semiconductor material having a second, nominal, lattice parameter that is substantially different from the first lattice parameter and that is strained by the matching layer. This process includes transfer of the film to a receiving substrate. The invention also relates to the semiconductor structures that can be produced by the process.
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Bensahel Daniel
Ghyselen Bruno
Skotnicki Thomas
Le Thao P.
S.O.I.Tec Silicon on Insulator Technologies S.A.
Winston & Strawn LLP
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