Coating processes – Coating by vapor – gas – or smoke – Base includes an inorganic compound containing silicon or...
Patent
1996-12-13
1999-02-02
Beck, Shrive
Coating processes
Coating by vapor, gas, or smoke
Base includes an inorganic compound containing silicon or...
4272552, C23C 1634
Patent
active
058662057
ABSTRACT:
A method is provided for forming films comprising TiN or Ti--Si--N employing the techniques of chemical vapor deposition to decompose a vapor !.sub.y wherein each of R.sup.1, R.sup.2, R.sup.3, R.sup.8 and R.sup.9 are (C.sub.1 -C.sub.4) alkyl, each of R.sup.4, R.sup.5, R.sup.6, and R.sup.7 are each H or (C.sub.1 -C.sub.4) alkyl and x and y are 1-3; so as to deposit a film comprising titanium on the surface of a substrate.
REFERENCES:
patent: 4340617 (1982-07-01), Deutsch, et al.
patent: 4713258 (1987-12-01), Umemura
patent: 4721631 (1988-01-01), Endo et al.
patent: 4868005 (1989-09-01), Ehrlich et al.
patent: 4876112 (1989-10-01), Kaito et al.
patent: 4923717 (1990-05-01), Gladfelter et al.
patent: 5005519 (1991-04-01), Egermeier et al.
patent: 5022905 (1991-06-01), Grundy et al.
patent: 5139825 (1992-08-01), Gordon et al.
patent: 5151009 (1993-03-01), Gladfelter et al.
patent: 5227334 (1993-07-01), Sandhu
patent: 5254499 (1993-10-01), Sandhu et al.
patent: 5300321 (1994-04-01), Nakano et al.
patent: 5314727 (1994-05-01), McCormick et al.
patent: 5348587 (1994-09-01), Eichman et al.
patent: 5378501 (1995-01-01), Foster et al.
patent: 5464656 (1995-11-01), Verkade
patent: 5591483 (1997-01-01), Winter et al.
patent: 5603988 (1997-02-01), Shapiro et al.
patent: 5607722 (1997-03-01), Vaarstra et al.
Murarka, S., Metallization: Theory and Practice for VLSI and ULSI, I-3, (1993).
Toth, L.E., "Transition Metal Carbides and Nitrides", J.L. Margrave, ed., vol. 7, Academic Press, NY (1971), Chapter 1, (no month).
Drake, S.R., et al., "Titanium Amide Molecular Precursors for Titanium Nitride", Polyhedron, 13 (2) , pp. 181-186, (Jan. 1994).
Fix, et al., "Chemistry of Materials", Chemical Vapor Deposition of Vanadium, Niobium, and Tantalum Nitride Thin Films, pp. 614-619, (May 1993).
Herman, I. P., Chem. Rev., 89, 1323 (no month), pp. 1346-1349.
Hoffman, D.M., "Polyheron: vol. 13 No. 8", Chemical Vapour Deposition of Nitride Thin Films, Department of Chemistry, University of Houston, TX, pp. 1160-1179, (1994) (no month).
Liao, et al., "Advanced Metallization for ULSI Applications", Conference Proceedings ULSI-X, pp. 231-237, (1994) (no month).
Liao, J.H., et al., "Experimental and Simulation Studies of Atmospheric Pressure Chemical Vapor Deposition of Titanium Nitride From Tetrakis-Dimethylaminotitanium and Ammonia", Conference Proceedings ULSI-X, Materials Research Society, pp. 231-237, (1995) (no month).
Morosanu, C.E., "Thin Films by Chemical Vapor Deposition", Elsevier, N.Y. at pp. 42-54, 460-475 (1990), (no month).
Sandhu, G., et al., "Metalorganic Chemical Vapor Deposition of TiN Films for Advanced Metallization", (Nov. 1992).
Sun, X., et al., "Ti-Si-N Diffusion Barriers for Al & Cu Metallizations", California Institute of Technology, (date unknown).
Travis, et al., "A Scalable Submicron Contact Technology Using Conformal LPCVD TiN", IEDM Technical Digest, pp. 47-49, 1990 (no month).
Lai Wing-Cheong Gilbert
Vaartstra Brian A.
Beck Shrive
Meeks Timothy
Micro)n Technology, Inc.
LandOfFree
Process for titanium nitride deposition using five- and six-coor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Process for titanium nitride deposition using five- and six-coor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for titanium nitride deposition using five- and six-coor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1115069