Metal working – Method of mechanical manufacture – Electrical device making
Patent
1991-10-29
1993-08-03
Arbes, Carl J.
Metal working
Method of mechanical manufacture
Electrical device making
156643, 156652, 156901, 427 97, 437203, H01K 310
Patent
active
052317510
ABSTRACT:
This invention relates generally to a structure and process for thin film interconnect, and more particularly to a structure and process for a multilayer thin film interconnect structure with improved dimensional stability and electrical performance. The invention further relates to a process of fabrication of the multilayer thin film structures. The individual thin film structure is termed a compensator, and functions as both a ground/reference plane and as a stabilizing entity with regard to dimensional integrity. The compensator is comprised primarily of a metal sheet having a metallized via pattern and high-temperature stable polymer as an insulator.
REFERENCES:
patent: 2692190 (1954-10-01), Pritikin
patent: 3181986 (1965-05-01), Pritikin
patent: 3466206 (1969-09-01), Beck
patent: 3541222 (1970-11-01), Parks et al.
patent: 4070501 (1978-01-01), Corbin et al.
patent: 4604160 (1986-08-01), Murakami et al.
patent: 4707657 (1987-11-01), Boegh-Peterson
patent: 4933045 (1990-06-01), DiStefano et al.
R. P. King, et al., "Screening Masks and Method of Fabrication" IBM Technical Disclosure Bulletin, vol. 20, No. 2, pp. 577-578 (Jul. 1977).
U.S. patent application Ser. No. 07/503,401 filed on Mar. 30, 1990 entitled "Low TCE Polyimides" (IBM Docket No. FI9-90-012).
U.S. patent application Ser. No. 07/695,368 filed on May 3, 1991 entitled "Multi-Layer Thin Film Structure and Parallel Processing Method For Fabricating Same" (IBM Docket No. YO9-90-062).
U.S. patent application Ser. No. 07/740,760 filed on Aug. 5, 1991 entitled "Low RCE Polyimides As Improved Insulator In Multilayer Interconnect Structures" (IBM Docket No. FI9-9-086).
Kellner Benedikt M. J.
McGuire Kathleen M.
Sachdev Krishna G.
Sorce Peter J.
Ahsan Aziz M.
Arbes Carl J.
International Business Machines - Corporation
LandOfFree
Process for thin film interconnect does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Process for thin film interconnect, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for thin film interconnect will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2262577