Coating processes – Coating by vapor – gas – or smoke – Base includes an inorganic compound containing silicon or...
Patent
1988-05-31
1989-10-31
Childs, Sadie
Coating processes
Coating by vapor, gas, or smoke
Base includes an inorganic compound containing silicon or...
4272552, 4272553, 437238, 437241, 437243, C23C 1634, C23C 1640
Patent
active
048776513
ABSTRACT:
A thermal CVD process for forming silicon nitride-type or silicon dioxide-type films onto a substrate comprising the steps of:
REFERENCES:
patent: 3540926 (1970-11-01), Rairden, III
patent: 3652331 (1972-03-01), Yamazaki
patent: 4142004 (1979-02-01), Hauser, Jr. et al.
patent: 4279947 (1981-07-01), Goldman et al.
patent: 4500483 (1985-02-01), Veltri et al.
patent: 4634605 (1987-01-01), Wiesmann
patent: 4657777 (1987-04-01), Hirooka et al.
patent: 4681653 (1987-07-01), Purdes et al.
patent: 4686112 (1987-08-01), Hoffmann
patent: 4696834 (1987-09-01), Varaprath
patent: 4699825 (1987-10-01), Sakai et al.
patent: 4720395 (1988-01-01), Foster
patent: 4738873 (1988-04-01), Roba et al.
patent: 4756977 (1988-07-01), Haluska et al.
Watanabe et al., "A Simple and Convenient Method for Preparing Di-t-Butylsilanes", Chemistry Letters, pp. 1321-1322 (1981).
K. Triplett et al., "Synthesis and Reactivity of Some t-butyl-disilanes and digermanes", J. of Organometallic Chemistry, vol. 107, pp. 23-32, 1976.
Doyle et al., "Hindered Organosilicon Compounds Synthesis and Properties of Di-tert-butyl, Di-tert-butylmethyl- and Tri-tert-butylsilanes" J. American Chemical Society, 97, pp. 3777-3782 (1975).
Chemical Abstracts, vol. 38, 126375t.
Chemical Abstracts, vol. 101, 91218.
Watanabe et al., "Properties of Silicon Nitride Films Prepared by Plasma-Enhanced Chemical Vapor Deposition of SiH.sub.4 --N.sub.2 Mixtures" Thin Solid Films, 136, pp. 77-83 (1986).
Childs Sadie
Olin Corporation
Simons William A.
LandOfFree
Process for thermally depositing silicon nitride and silicon dio does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Process for thermally depositing silicon nitride and silicon dio, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for thermally depositing silicon nitride and silicon dio will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-624932