Process for thermally depositing silicon nitride and silicon dio

Coating processes – Coating by vapor – gas – or smoke – Base includes an inorganic compound containing silicon or...

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4272552, 4272553, 437238, 437241, 437243, C23C 1634, C23C 1640

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048776513

ABSTRACT:
A thermal CVD process for forming silicon nitride-type or silicon dioxide-type films onto a substrate comprising the steps of:

REFERENCES:
patent: 3540926 (1970-11-01), Rairden, III
patent: 3652331 (1972-03-01), Yamazaki
patent: 4142004 (1979-02-01), Hauser, Jr. et al.
patent: 4279947 (1981-07-01), Goldman et al.
patent: 4500483 (1985-02-01), Veltri et al.
patent: 4634605 (1987-01-01), Wiesmann
patent: 4657777 (1987-04-01), Hirooka et al.
patent: 4681653 (1987-07-01), Purdes et al.
patent: 4686112 (1987-08-01), Hoffmann
patent: 4696834 (1987-09-01), Varaprath
patent: 4699825 (1987-10-01), Sakai et al.
patent: 4720395 (1988-01-01), Foster
patent: 4738873 (1988-04-01), Roba et al.
patent: 4756977 (1988-07-01), Haluska et al.
Watanabe et al., "A Simple and Convenient Method for Preparing Di-t-Butylsilanes", Chemistry Letters, pp. 1321-1322 (1981).
K. Triplett et al., "Synthesis and Reactivity of Some t-butyl-disilanes and digermanes", J. of Organometallic Chemistry, vol. 107, pp. 23-32, 1976.
Doyle et al., "Hindered Organosilicon Compounds Synthesis and Properties of Di-tert-butyl, Di-tert-butylmethyl- and Tri-tert-butylsilanes" J. American Chemical Society, 97, pp. 3777-3782 (1975).
Chemical Abstracts, vol. 38, 126375t.
Chemical Abstracts, vol. 101, 91218.
Watanabe et al., "Properties of Silicon Nitride Films Prepared by Plasma-Enhanced Chemical Vapor Deposition of SiH.sub.4 --N.sub.2 Mixtures" Thin Solid Films, 136, pp. 77-83 (1986).

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