Process for the simultaneous production of bipolar and complemen

Details Process for the simultaneous production of bipolar and complemen Process for the simultaneous production of bipolar and complemen

1986-11-17

1988-04-05

Ozaki, George T.

Fishing, trapping, and vermin destroying

437 41, 437 57, H01L 21425

Patent

active

047359110

ABSTRACT:
A process for the simultaneous production of bipolar transistors and complementary MOS transistors on a common silicon substrate wherein to accommodate the p-channel transistors, n-doped zones are produced in a p-doped substrate and npn bipolar transistors are provided in the n-doped zones where the n-zones form the collector of the transistor and the n-zones are superimposed over n.sup.+ -doped zones. The latter are connected in the bipolar transistor zone by deeply extending collector terminals. The use of sidewall insulation on the p.sup.+ - and n.sup.+ -conducting structures composed of polysilicon or a silicide which are used for diffusing-out source/drain zones and base-emitter zones permit the formation of shorter channel lengths. The process is used to produce VLSI circuits which have high switching speeds.

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Miyamoto et al., International Electron Devices Meeting, Technical Digest, Dec. 5-7, 1983, Wn., D.C., pp. 63-66.

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