Process for the selective epitaxy and etching of a III-V materia

Details Process for the selective epitaxy and etching of a III-V materia Process for the selective epitaxy and etching of a III-V materia

1991-09-16

1993-05-18

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437126, 437133, H01L 21203, H01L 2120

Patent

active

052121135

ABSTRACT:
This process consists of depositing on a III-V or II-VI material (2) a mask layer (6), etching the latter in order to form therein openings (9) facing areas of the material on which epitaxy is to be carried out and then carrying out the epitaxy of the semiconductor layer (14) on said areas in an OMCVD frame by subjecting, at atmospheric pressure, the masked material simultaneously to vapours of chemical species of at least one III or II element and at least one V or VI element, as well as to vapours of HCl or at least one halide of a V or VI element, the elements III and V or II and VI of the chemical species and the halide being those which will form the semiconductor layer, said species being organometallic and/or hydrogen compounds. It is also possible, just prior to the epitaxy stage, to etch (12) the unmasked areas of the material, at atmospheric pressure, in the same frame as for the epitaxy using vapours of at least one halide of a III, V, II or VI element constituting the material to be etched.

REFERENCES:
patent: 4368098 (1983-01-01), Manasevit
patent: 4488914 (1984-12-01), Quinlan et al.
patent: 4975252 (1990-12-01), Nishizawa et al.
patent: 5103271 (1992-04-01), Izumiya et al.
Journal of Crystal Growth, vol. 99, Nos. 1/4, Jan. 1990, pp. 324-328, Amsterdam, NL; T. F. Kuech et al.: "Selective epitaxy of MOVPE GaAs using diethyl gallium chloride".
Patent Abstracts of Japan, vol. 13, No. 453 (E-831), 11 Oct. 1989.
Journal of the Electrochemical Society, vol. 113, No. 9, Sep. 1966, pp. 904-908; D. W. Shaw: "Selective epitaxial deposition of gallium arsenside in holes".

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