Process for the selective encapsulation of an electrically condu

Details Process for the selective encapsulation of an electrically condu Process for the selective encapsulation of an electrically condu

1990-05-21

1992-06-30

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437192, 437194, 437197, 437246, 437983, H01L 21283

Patent

active

051262835

ABSTRACT:
A process for fabricating an improved semiconductor device is disclosed wherein a protective layer of Al.sub.2 O.sub.3 is selectively formed to encapsulate a refractory-metal conductor. To form the Al.sub.2 O.sub.3 layer, first an Al/refractory-metal alloy is selectively formed on the surface of the refractory-metal conductor, then the Al/refractory-metal alloy is reacted with O.sub.2. The resulting Al.sub.2 O.sub.3 encapsulation layer acts as an O.sub.2 diffusion barrier preventing the oxidation of the refractory-metal during subsequent process steps used to fabricate the semiconductor device. In addition, the Al.sub.2 O.sub.3 layer improves the mechanical compatibility of the refractory-metal conductor with other materials used to construct the semiconductor device, such as, for example, improving the adhesion of an overlying layer of passivation glass to the refractory-metal conductor.

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