Process for the repair of floating-gate non-volatile memories da

Details Process for the repair of floating-gate non-volatile memories da Process for the repair of floating-gate non-volatile memories da

1997-12-15

1999-03-30

Chaudhuri, Olik

Semiconductor device manufacturing: process

Repair or restoration

438594, 438257, 438308, H01L 21268

Patent

active

058888365

ABSTRACT:
The process described requires the formation of floating-gate non-volatile memory cells entirely similar in structure to those produced by known processes. The process comprises an annealing treatment at relatively low temperature (430.degree. C.) to repair damage due to plasma treatments. To obtain threshold voltage values for the cells close to the theoretical values, especially for cells with particularly extended interconnections, the cells are subjected to ultraviolet radiation before the annealing treatment, in order to neutralize any electrical charges present in the floating-gate electrodes of the cells.

REFERENCES:
patent: 4916082 (1990-04-01), Lesk et al.
patent: 5254497 (1993-10-01), Liu
patent: 5279981 (1994-01-01), Fukatsu et al.
patent: 5587330 (1996-12-01), Yamazaki
patent: 5656521 (1997-08-01), Hamilton et al.

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