Etching a substrate: processes – Nongaseous phase etching of substrate – Recycling – regenerating – or rejunevating etchant
Patent
1996-10-31
1999-11-16
Nguyen, Ngoc-Yen
Etching a substrate: processes
Nongaseous phase etching of substrate
Recycling, regenerating, or rejunevating etchant
423629, 23301, 23305A, 156 6421, B44C 122, C01F 734
Patent
active
059851651
ABSTRACT:
The present invention allows the reproduction of a crystalline aluminum hydroxide having a high particle strength and a high purity which can find wide application such as abrasive from a supersaturated sodium aluminate solution which is being recycled in the production of aluminum hydroxide or lithographic printing plate. In a process for the purification of aluminum hydroxide which comprises the hydrolysis reaction of a supersaturated solution of sodium aluminate to crystallize aluminum hydroxide, the improvement which comprises the steps of keeping the temperature of a suspension formed by mixing a mother liquor having a total caustic soda concentration of from 50 to 700 g/l and an aluminum concentration or from 0 to 300 g/l with crystalline aluminum hydroxide at a range of from 10.degree. C. to 200.degree. C. for at least 1 to 48 hours, mixing the suspension with the supersaturated solution of sodium aluminate, and then causing the crystallization reaction at the crystallization reaction temperature.
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Translation of JP 5-279,020 ( Oct. 1993.
Fukuta Hiroshi
Kakei Tsutomu
Miwa Hideki
Tomita Tadabumi
Fuji Photo Film Co. , Ltd.
Nguyen Ngoc-Yen
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