Fishing – trapping – and vermin destroying
Patent
1993-09-28
1994-11-22
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437231, 437937, H01L 21469
Patent
active
053669100
ABSTRACT:
A process for producing a thin film transistor suitable to a high integrated static ram (SRAM) or a liquid crystal display, thereby improvements in a leak current and an operating current along with a process for the production of a thin film transistor.
The process comprises a step of forming a SOG film in a predetermined thickness on the entire upper surface of a TFT structure and subsequently treating the SOG film with O.sub.2 plasma to increase the hydrogen content therein, a step of depositing an insulating film on the SOG film to prevent the hydrogen of SOG film from escaping therefrom and thereafter, applying heat treatment to the SOG film to infiltrating the hydrogen of the SOG film into a channel formed in a polysilicon layer in the TFT structure, and a step of removing the insulating film and the SOG film.
There may be reduced a leak current when switching off the TFT as well as increased an operating current when switching on the TFT. Accordingly, in accordance with the present invention, the characteristics of TFT is greatly improved.
REFERENCES:
patent: 4885262 (1989-12-01), Ting et al.
patent: 5252515 (1993-10-01), Tsai et al.
patent: 5254497 (1993-10-01), Liu
Choi Dong K.
Ha Hyoung C.
Chaudhari Chandra
Hearn Brian E.
Hyundai Electronics Industries Co,. Ltd.
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