Process for the production of thin film transistor using oxygen

Details Process for the production of thin film transistor using oxygen Process for the production of thin film transistor using oxygen

1995-01-31

1996-09-10

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437101, H01L 2184, H01L 21336

Patent

active

055545475

ABSTRACT:
A process for producing a thin film transistor suitable to a high integrated static ram (SRAM) or a liquid crystal display, thereby improvements in a leak current and an operating current along with a process for the production of a thin film transistor. The process comprises treating a channel polysilicon layer of a TFT structure with oxygen plasma to eliminate the drawbacks generated in an interface between the channel polysilicon layer and a gate insulating film and in the channel polysilicon layer itself. There may be a reduced leak current when switching off the TFT as well as an increased operating current when switching on the TFT. Accordingly, in accordance with the present invention, the characteristics of TFT is greatly improved.

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patent: 5047360 (1991-09-01), Nicholas
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patent: 5114869 (1992-05-01), Tanaka et al.
patent: 5141885 (1992-08-01), Yoshida et al.
patent: 5250444 (1993-10-01), Khan et al.
patent: 5372958 (1994-12-01), Miyasaka et al.

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