Process for the production of silicon nitride

Details Process for the production of silicon nitride Process for the production of silicon nitride

1984-04-12

1985-07-23

Carter, H. T.

Chemistry of inorganic compounds

Silicon or compound thereof

Binary compound

501 97, C01B 21068

Patent

active

045308250

ABSTRACT:
A process for the production of silicon nitride by reaction of silicon dioxide, carbon and nitrogen at temperatures above about 1300.degree. C. whereby a partial pressure of nitrogen above 1 bar is maintained during the reaction.

REFERENCES:
patent: 1054901 (1913-03-01), Bosch et al.
patent: 3855395 (1974-12-01), Cutler
patent: 4117095 (1978-09-01), Komeya et al.
CRC Handbook of Chemistry and Physics, 62nd ed., Weast, ed., 1981-1982, pp. F282, B-27.

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