Process for the production of silicon carbide with a large speci

Details Process for the production of silicon carbide with a large speci Process for the production of silicon carbide with a large speci

1988-10-06

1990-04-03

Dees, Carl F.

Catalyst, solid sorbent, or support therefor: product or process

Catalyst or precursor therefor

Inorganic carbon containing

423346, 423440, B01J 2118, B01J 2722

Patent

active

049140701

ABSTRACT:
The invention is directed to a process for the production of fine grains of silicon carbide which are formed by an agglomerate of submicronic grains having a specific surface area that is at least 100 m.sup.2 .multidot.g.sup.-1, which are intended in particular to serve as a carrier for catalysts for petrochemistry, and for catalytic reactions at elevated temperature which can attain 1000.degree. C., the process comprising reacting vapors of silicon monoxide SiO on carbon, being characterized by: generating vapors of SiO in a first reaction zone by heating a mixture SiO.sub.2 +Si at a temperature of between 1100.degree. and 1400.degree. C., under a pressure of between 0.1 and 1.5 hPa; and, in a second reaction zone, contacting the SiO vapors with reactive carbon in the divided state with a specific surface area that is at least equal to 200 m.sup.2 .multidot.g.sup.-1 at a temperature of between 1100.degree. and 1400.degree. C. Preferably, the reactive carbon is doped by an addition of from 1 to 10% by weight of a metallic element selected from uranium, cerium, titanium, zirconium, hafnium and lanthanides.

REFERENCES:
patent: 1266478 (1918-05-01), Hutchins
patent: 1930716 (1933-10-01), Jaeger
patent: 2431326 (1947-11-01), Heyroth
patent: 2451485 (1948-10-01), Hearne et al.
patent: 3526602 (1970-09-01), Kobayashi et al.
patent: 3839542 (1974-10-01), Chase
patent: 4784839 (1988-11-01), Bachelard et al.

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