Process for the production of semiconductor foils and their use

Details Process for the production of semiconductor foils and their use Process for the production of semiconductor foils and their use

1993-09-23

1996-02-13

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having moving solid-liquid-solid region

117 41, 117 42, 117 46, 117 47, 117933, C30B 1308

Patent

active

054904773

ABSTRACT:
High purity semiconductor foils, such as silicon foils useful in solar energy cells, are produced by treating an impure semiconductor foil with at least one reactive gas while in the crystallizing state.

REFERENCES:
patent: 3092462 (1963-06-01), Goorisen
patent: 4200621 (1980-04-01), Liaw et al.
patent: 4330582 (1982-05-01), Lindmayer
patent: 4602980 (1986-07-01), Ellis et al.
patent: 5069740 (1991-12-01), Levine et al.

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