Process for the production of self-adjusted bipolar transistor s

Details Process for the production of self-adjusted bipolar transistor s Process for the production of self-adjusted bipolar transistor s

1986-11-17

1988-07-05

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437191, 437233, 437228, 156657, 357 34, 357 59, H01L 21265

Patent

active

047554762

ABSTRACT:
Self-adjusted bipolar transistors having reduced extrinsic base resistance are produced by forming an emitterterminal from a polysilicon layer structure and etching free the polysilicon layer structure using the emitter layer structure as a mask. Sidewall insulating layers are provided with a metallically conductive layer. This layer is self-adjusting in relation to the emitter zone and surrounds the emitter in an annular formation. The structure improves the foursided base wiring around the emitter and is used in the production of highly integrated bipolar circuits.

REFERENCES:
patent: 4188707 (1980-02-01), Asano et al.
patent: 4481706 (1984-11-01), Roche
patent: 4546536 (1985-10-01), Anantha et al.
Ting, IEDM 84 Technical Digest 1984, pp. 110-113.
Wieder, Siemens Forsch-u. Entwicki (1984).

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