Process for the production of pure, silicon elemental semiconduc

Details Process for the production of pure, silicon elemental semiconduc Process for the production of pure, silicon elemental semiconduc

1977-06-29

1979-01-02

Cooper, Jack

Chemistry of inorganic compounds

Silicon or compound thereof

Elemental silicon

423349, C01B 3302

Patent

active

041327632

ABSTRACT:
An improved process for the production of pure, elemental semiconductor material, especially silicon, of the type wherein the semiconductor material is produced by decomposition from the gaseous phase, is provided, which includes the initial step of maintaining a melt of the semiconductor material at a temperature of up to a maximum of 200.degree. C above the melting point of the material. Thereafter, at least a gaseous, decomposable compound of the semiconductor material is introduced into the melt, under a pressure of about 0.01 to 30 bar, to produce a pure, elemental semiconductor material in liquid form.

REFERENCES:
patent: 2938772 (1960-05-01), Enk
patent: 4054641 (1977-10-01), Carman

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