Process for the production of polycrystalline silicon coatings b

Details Process for the production of polycrystalline silicon coatings b Process for the production of polycrystalline silicon coatings b

1987-08-18

1988-07-26

Kaplan, G. L.

Chemistry: electrical and wave energy

Processes and products

C25D 366

Patent

active

047598301

ABSTRACT:
A novel process for the electrolytic deposition of silicon from a melt containing covalent silicon compounds, in particular silicon tetrahalides, and furthermore aluminum halides, alkali metal halides and halides of transition metals is carried out at relatively low temperatures of 100.degree. to 350.degree. C. in an inert temperature. The silicon is deposited cathodically or anodically onto electrically conductive material.
The silicon coatings are homogeneous and adhere firmly to the substrate. The coated materials can be used for the production of photoconductive or photovoltaic devices.

REFERENCES:
patent: 3983012 (1976-09-01), Cohen
Dennis Elwell et al., Solar Energy Materials, vol. 6, pp. 123-145 (1982).
Monnier, Chimia 37, 109-124 (1983).
Elswell, J. Crystal Growth, 52, 714-752 (1981).
Delimarskii et al., Chemical Abstracts, 96:42968j, (1982).

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