Process for the production of low carbon silicon

Details Process for the production of low carbon silicon Process for the production of low carbon silicon

1987-08-03

1989-10-31

Doll, John

Chemistry of inorganic compounds

Silicon or compound thereof

Elemental silicon

156DIG64, 423345, 423349, C01B 3302

Patent

active

048775967

ABSTRACT:
Silicon having a low carbon content is produced by removing carbon from molten silicon by heating the molten silicon to temperatures of 1420.degree. to 1900.degree. C. and establishing a temperature gradient of 30.degree. to 400+ K. in the melt.

REFERENCES:
patent: 2402582 (1946-06-01), Scaff
patent: 3671229 (1972-06-01), Ferber et al.
patent: 4242307 (1980-12-01), Fally
patent: 4388286 (1983-06-01), Kapur et al.

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