Process for the production of improved refined metallurgical sil

Chemistry of inorganic compounds – Silicon or compound thereof – Elemental silicon

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23301, 156616R, 156617SP, 156DIG64, B01J 1720, C01B 3302

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active

041939751

ABSTRACT:
Silicon platelets essentially free of iron are precipitated from a solution of metallurgical grade silicon in molten aluminum and are melted in contact with silica slag to produce a refined metallurgical silicon (RMS). Multigrained boules of said RMS are pulled by the Czochralski method on a rotating silicon seed rod from a melt of said RMS. Alternatively, the silicon-slag melt can be directionally solidified to produce a directionally solidified refined metallurgical silicon (DS/RMS) separated from a region of solidified melt having a high concentration of impurities rejected by the silicon as it solidifies. Multigrained DS/RMS boules are pulled from a melt of said DS/RMS. Alternatively, the DS/RMS is remelted and directionally solidified a second time with single crystal DS/RMS boules being pulled from a melt of the twice directionally solidified material. The thus-pulled, multigrained RMS and DS/RMS and single crystal DS/RMS materials are low-cost products having a substantially higher impurity content than in conventional high purity semiconductor grade silicon while, at the same time, having desirable solar cell properties.

REFERENCES:
patent: 1180968 (1916-04-01), Brockbank
patent: 3012865 (1961-12-01), Pellin
patent: 3097068 (1963-07-01), Litz et al.
patent: 3871872 (1975-03-01), Downing et al.
Runyan, "Silicon Semiconductor Technology", McGraw Hill Book Co., pp. 34-39.

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