Chemistry of inorganic compounds – Silicon or compound thereof – Oxygen containing
Patent
1976-01-26
1978-01-10
Cooper, Jack
Chemistry of inorganic compounds
Silicon or compound thereof
Oxygen containing
423337, C01B 3318
Patent
active
040679543
ABSTRACT:
Process for the production of finely divided silicon dioxide having a surface of more than about 380 m.sup.2 /g BET which comprises converting a volatile silicon halide in an inert gas vehicle with a gas forming water upon combustion and oxygen gas or air in a flame, the quantity of oxygen being sufficient for the practically complete combustion of the combustible gas, and the quantities of oxygen or air and combustible gas being sufficient to produce a quantity of water which will at least suffice for the hydrolysis of the volatile silicon halide, said volatile silicon halide consisting essentially of trichlorosilane and said inert gas vehicle consisting for instance of nitrogen, carbon dioxide, noble gases or others the amount of trichlorosilane vapor being about 410-565 g trichlorosilane vapor per Nm.sup.3 /h total gas, the molar ratio of trichlorosilane vapor to nitrogen being about 0.5:1 - 5:1, the molar ratio of hydrogen in the combustible gas to oxygen being about 0.5:1 - 1.3:1, and separating the resulting silicon dioxide from other reaction products. Finely divided silicon dioxide prepared according to this process is also provided. The finely divided silicon dioxide is useful as a thickening agent in liquid systems.
REFERENCES:
patent: 3660025 (1972-05-01), Driscoll
patent: 3772427 (1973-11-01), Moore
Cooper Jack
Deutsche Gold- und Silber-Scheideanstalt vormals Roessler
LandOfFree
Process for the production of finely divided silicon dioxide hav does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Process for the production of finely divided silicon dioxide hav, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for the production of finely divided silicon dioxide hav will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2271302