Process for the production of extremely flat silicon troughs by

Details Process for the production of extremely flat silicon troughs by Process for the production of extremely flat silicon troughs by

1978-04-18

1979-02-27

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29580, 156612, 156647, 156653, 156657, 156662, 357 55, 357 60, H01L 21205, H01L 21306

Patent

active

041417658

ABSTRACT:
The invention relates to a method for the production of extremely flat silicon troughs in a silicon substrate for MOS-transistors. The object is generally achieved by a localized etching process resulting in a slightly anisotropic trough characteristic and a subsequent rate controlled filling by a selection epitaxy process of said trough with a silicon material. The process is found to minimize the deleterious non-uniformities inherent in the prior art.

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patent: 3425879 (1969-02-01), Shaw et al.
patent: 3566220 (1971-02-01), Post
patent: 3629016 (1971-12-01), Glendinning
patent: 3745043 (1973-07-01), Bradley
patent: 3764409 (1973-10-01), Nomura et al.
patent: 3793712 (1974-02-01), Bean et al.
patent: 3853974 (1974-12-01), Reuschel et al.
Gupta, D. C., "Improved Methods of Depositing . . . Silicon," Solid State Tech., Oct. 1971, pp. 33-40.
Sugawara, K., "Facets Formed by Hydrogen Chloride . . ." J. Electrochem. Soc., vol. 118, No. 1, Jan. 1971, pp. 110-114.
Jackson, D.M., "Advanced Epitaxial Process . . . Applications," Trans. Metallurgical Soc. of AIME, vol. 233, Mar. 1965, pp. 596-602.
Sirtl et al., "Selective Epitaxy . . . Conditions," Semiconductor Silicon, 1969, pp. 189-199.

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