Process for the production of epitaxial layers on monocrystallin

Details Process for the production of epitaxial layers on monocrystallin Process for the production of epitaxial layers on monocrystallin

1977-09-14

1978-09-19

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148172, 427 86, H01L 21208

Patent

active

041151623

ABSTRACT:
A process or method for the production of epitaxial layers on a monocrystalline substrate by moving a melt on a surface of the substrate, depositing the layer and then removing the remaining melt from the substrate characterized by the substrate being a crystal having two boundary edges, which are parallel to one another and in which no preferred edge growth occurs in a direction running at right angles to the boundary edges and pointing outward from the interior of the substrate crystal so that no portion of the melt will be retained as the melt is being removed after forming the layer.

REFERENCES:
patent: 3753801 (1973-08-01), Lockwood et al.
patent: 3832225 (1974-08-01), Matsui et al.
patent: 3951700 (1976-04-01), Beppu et al.
patent: 3960618 (1976-06-01), Kawamura et al.
patent: 4050964 (1977-09-01), Rode

Affiliated with

Also associated with

Rating

Process for the production of epitaxial layers on monocrystallin does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for the production of epitaxial layers on monocrystallin, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for the production of epitaxial layers on monocrystallin will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2117159