Process for the production of crossing points for interconnectio

Details Process for the production of crossing points for interconnectio Process for the production of crossing points for interconnectio

1991-09-18

1992-08-25

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437228, 437978, H01L 2144

Patent

active

051418967

ABSTRACT:
In a semiconductor device, an inter-level insulating film is formed at solid crossing points between upper level interconnections and lower-level interconnections, excepting via hole portions. This means that mechanical support between interconnection levels is given by solid crossing points between interconnections. For this, a semiconductor device having high durabilities against thermal and mechanical impacts can be obtained.
Further, since inter-level regions other than the solid crossing points are made vacant to form a cavity, coupling capacity can be reduced to 1/3 to 1/2 of an ordinary multilevel interconnections wherein inter-level regions are fully filled with an inter-level insulating film.

REFERENCES:
patent: 4523372 (1985-06-01), Balda et al.
patent: 5084416 (1992-01-01), Ozaki et al.

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