Process for the production of Cd XTe semiconductor crystals...

Details Process for the production of Cd XTe semiconductor crystals... Process for the production of Cd XTe semiconductor crystals...

2006-06-27

2006-06-27

Utech, Benjamin L. (Department: 1765)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

C117S081000

Reexamination Certificate

active

07067008

ABSTRACT:
Process for the production of semiconductor crystals with high resistivity of the CdXTe type, wherein X=Zn, Se, ZnSe or 0, characterized in that it consists in carrying out a multiple doping with iron and with at least one second doping element selected from the group formed by the elements of group III of the periodic chart of the elements.

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STN search of Apr. 26, 2005.
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M. Schieber et al., “Comparison of Cadmium Zinc Telluride Crystals Grown by Horizontal and Vertical Bridgman and from the Vapor Phase,” Journal of Crystal Growth, V. 231, 2001, pp. 235-241.
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