Bridges
Patent
1988-06-15
1990-12-04
Chaudhuri, Olik
Bridges
437 24, 437 25, 437 26, 437 84, 437248, H01L 21265
Patent
active
049751263
ABSTRACT:
A process for the production of an insulator buried in a semiconductor substrate by ionic implantation, and semiconductor structure comprising such layer.
According to the invention the semiconductor structure comprises a silicon dioxide layer (104) interposed between a silicon substrate (102) and a silicon film (106) obtained by successive implantations of oxygen ions in the substrate, with doses less than 1.5.multidot.10.sup.18 ions/cm.sup.2, each implantation being followed by an annealing at a temperature higher than 1100.degree. C. The semi-conductor film (106) has a level of dislocations lower than 10.sup.5 per cm.sup.2, and the oxide layer (104) is completely homogeneous.
REFERENCES:
patent: 4676841 (1987-06-01), Celler
Electronics Letters, Apr. 1986, vol. 22, No. 9, K. J. Reeson.
Japanese Journal of Applied Physics, vol. 20, No. 12, 1987 (Irita).
Japanese Patent Abstracts, vol. 7, No. 148, Jun. 1983 (Toshio).
IEEE Transactions on Electron Devices, vol. ED-33, Mar. 1986 (Foster).
Solid State Technology, Mar. 1987 (G. K. Celler).
Appl. Phys. Lett., 50(1), Jan. 1987 (Alice et al.).
Bunker et al., "Formation of Silicon-on-Insulator Structures by Multiple Oxygen Implantations", Mat. Res. Soc. Symp. Proc. vol. 93 (Apr. 1987), pp. 125-130.
Margail Jacques
Stoemenos John
Chaudhuri Olik
Commissariat a l''Energie Atomique
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