Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having moving solid-liquid-solid region
Patent
1996-04-02
1999-04-27
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having moving solid-liquid-solid region
117 97, 117933, 117935, C30B 1310
Patent
active
058977058
ABSTRACT:
A process for the production of an epitaxially coated semiconductor wafer, composed of a substrate wafer of monocrystalline silicon having a front side and a rear side, has at least one layer of semiconductor material which is epitaxially deposited on the front side of the substrate wafer and which is obtained by production of a heavily doped silicon monocrystal by crucible-free zone pulling, production of a substrate wafer having polished front side from the monocrystal and deposition of at least one epitaxial layer of semiconductor material on the front side of the substrate wafer.
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Mayer Erwin-Peter
Siebert Wolfgang
Kunemund Robert
Wacker Siltronic Gesellschaft fur Halbeitermaterialien mbH
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