Process for the production of an electric contact on a HgCdTe su

Details Process for the production of an electric contact on a HgCdTe su Process for the production of an electric contact on a HgCdTe su

1987-09-16

1988-08-23

Weisstuch, Aaron

Fishing, trapping, and vermin destroying

437 5, 437185, 437203, 437229, 437247, 437904, 20419232, 20419234, 20419235, 156643, H01L 3118, H01L 2144

Patent

active

047660848

ABSTRACT:
The invention relates to a process for producing an electric contact on a HgCdTe substrate having a P conductivity and application to the production of an N/P diode. For producing an N/P diode, an insulating layer deposited on the HgCdTe substrate is etched by ion bombardment through a first mask, so as to produce a first opening in said insulating layer. The mask is removed and the substrate covered by the insulating layer undergoes a heat treatment, so as to at least mitigate the P conductivity drop induced by the ion bombardment in a first portion of the substrate facing the first opening. This is followed by ion implantation in a second portion of the substrate through a second mask in order to produce an N conductivity portion. This second mask is removed and the insulating layer is etched through a third mask by ion bombardment in order to produce a second opening facing the second portion. After removing the third mask, conductive pads are produced in the first and second openings.

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Conference Europeenne sur les Communications Optiques (1982), pp. 389-393.

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