Process for the production of a thin film transistor having a do

Details Process for the production of a thin film transistor having a do Process for the production of a thin film transistor having a do

1993-02-25

1994-10-18

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 2, 437101, 437192, 437235, 437916, 148DIG106, H01L 21265

Patent

active

053568249

ABSTRACT:
A process for the production of thin film transistor with a double gate and an optical mask consisting of depositing a conductive source and drain layer on an insulating substrate (31), producing photosensitive resin patterns fixing the location of the source and drain (34), etching the conductive layer, depositing on the structure obtained an opaque metal layer for forming the lower gate (42), carrying out thermal contraction of the resin patterns, depositing in isotropic manner a preferably a-C:H layer (39), dissolving the resin patterns, depositing a semiconductor layer (44), an insulating layer (45) and then a conductive layer (46) for producing the upper gate of the transistor and photoetching the stack formed by the conductive layer, the semiconducting layer and the insulating layer in order to fix the transistor dimensions and passivate the structure obtained with an electrical insulant (48).

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Meas. Sci. Technology, vol. 1, pp. 759-766, 1990, D. Daly et al., "The Manufacture of Microlenses by Melting Photoresist".
Product Bulletin, Olin Hunt, Waycoat HPR 200 Series (Date Unknown).
Proceedings of the Sid., vol. 27, No. 3, 1986, Los Angeles pp. 229-234, T. Sunata et al., "A Large-Area High-Resolution Active-Matrix Color LCD Addressed by a-Si TFT's".
Applied Physics Letters., vol. 50, No. 13, Mar. 30, 1987, New York, pp. 818-820, H. Hirai et al., "Tellurium thin-film transistor deposited on polyester film having plasma polymerized films on double-layered gate insulators".
Proceedings of the Sid., vol. 28, No. 2, 1987, Los Angeles, pp. 127-130, T. Sakai et al., "An active-matrix-addressed color LCD using a V2-TFT".

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