Process for the production of a thin-film circuit

Details Process for the production of a thin-film circuit Process for the production of a thin-film circuit

1976-10-15

1978-04-18

Weisstuch, Aaron

Chemistry: electrical and wave energy

Processes and products

204 38A, 204192SP, 204192F, 323 78, 333 70CR, 338308, 361274, C25D 550, C23C 1500

Patent

active

040850110

ABSTRACT:
A thin-film circuit which includes temperature-compensated RC elements consisting of an AlTa alloy layer having approximately 3-17 at % tantalum in aluminum, which is sputtered or vapor deposited onto a non-conductive substrate, is produced by a process in which the AlTa alloy layer is deposited in an operative, reactive gas mixture, containing at least one of the gases O.sub.2, CO.sub.2, and N.sub.2 and the TC.sub.R value is established by the tantalum component of the alloy layer and/or partial pressure of the reactive gas, and the TC.sub.C value of the capacitors formed from the AlTa alloy layer is established by tempering to be at least approximately oppositely equal to the TC.sub.R value.

REFERENCES:
patent: 3607679 (1971-09-01), Melroy et al.
patent: 3627577 (1971-12-01), Steidel
patent: 3718565 (1973-02-01), Pelletier
patent: 3738919 (1973-06-01), Chilton et al.
patent: 3955039 (1976-05-01), Roschy et al.
patent: 4020222 (1977-04-01), Kausche et al.
R. W. Berry et al., "Tantalum Printed Capacitors", Proc. IRE, June, 1959, pp. 1070-1075.

Affiliated with

Also associated with

Rating

Process for the production of a thin-film circuit does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for the production of a thin-film circuit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for the production of a thin-film circuit will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2145798