Process for the production of a substrate for an electrically co

Details Process for the production of a substrate for an electrically co Process for the production of a substrate for an electrically co

1984-08-20

1987-02-17

Corbin, John K.

Metal treatment

Stock

Ferrous

148174, 427 86, G02F 113, H01L 21205

Patent

active

046435271

ABSTRACT:
The invention relates to a process for the production of a substrate for an electrically controlled device such as a display screen, said substrate integrating non-linear elements and control elements of the elementary display points. The invention relates to the production of a substrate, in its active part, has non-linear elements associated with each image element and produced from amorphous silicon and, in its peripheral part, polycrystalline silicon controlled elements. Initially the substrate has amorphous silicon layers, the peripheral crystallization being obtained by annealing in a temperature gradient furnace.

REFERENCES:
patent: 4459163 (1984-07-01), MacDiarmid et al.
Revue de Physique Appliquee, vol. 17, No. 12, decembre 1982, Orsay (FR), D. Bensahel et al.: "A Comparison Between Furnace and CW Laser . . . ".
Journal of Applied Physics, vol. 54, No. 5, mai 1983, New York (US), Y. Kunii et al.: "Solid-Phase Lateral Epitaxy of Chemical-Vapor . . . ".
Applied Physics Letters, vol. 40, No. 11, juin 1983, New York (US), N. Szydlo et al.: "High Current Post-Hydrogenated Chemical Vapor . . . ".
Eai-Electronique et Applications Industrielles; No. 254, 1er juin 1978, Paris (FR), F. Morin: "Des Transistors en Couches Minces Pour . . . ".

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