Process for the production of a semiconductor luminescence diode

Details Process for the production of a semiconductor luminescence diode Process for the production of a semiconductor luminescence diode

1974-08-27

1976-06-15

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29572, 148171, 148172, 156 17, 313483, 357 17, 357 55, 357 61, 357 88, H01L 21306, H01L 2906, H01L 3300

Patent

active

039635376

ABSTRACT:
A process for producing semiconductor luminescence diodes wherein an epitaxial layer is deposited on a monocrystal composed of a semi-insulating semiconductor material, a portion of the monocrystal at least up to the level of the epitaxial layer is removed to leave a border of monocrystal material and exposed epitaxial layer, and a dopant is diffused into this exposed epitaxial layer and the remaining border of the monocrystal material to produce a pn-junction in the epitaxial layer, and finally suitable electrodes are applied to the thus redoped zone of the epitaxial layer.

REFERENCES:
patent: 3099591 (1963-07-01), Shockley
patent: 3119947 (1964-01-01), Goetzberger
patent: 3343026 (1967-09-01), Luechinger
patent: 3675064 (1972-07-01), Coleman et al.
IEEE Journal of Quantum Electronics, vol. QE-8, No. 3, Mar. 1972, pp. 370 & 371.
Rupprecht et al., "Electroluminescent Display Devices," I.B.M. Tech. Discl. Bull., vol. 10, No. 10, Mar. 1968, p. 1479.
Chiu et al., "Vidicon Diode Array," IBID., vol. 15, No. 6, Nov. 1972, p. 1976.
Blum et al., "Solid-State Light-Emitting Diodes," IBID., vol. 13, No. 9, Feb. 1971, p. 2494.

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