Process for the production of a semiconductor device

Details Process for the production of a semiconductor device Process for the production of a semiconductor device

1985-03-25

1986-12-30

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Assembling or joining

29569L, 148175, 372 45, 372 48, H01L 2136

Patent

active

046318020

ABSTRACT:
A semiconductor device composed of a transistor for modulation and a semiconductor laser as one body, in which on the uppermost layer of a semiconductor laser composed of a multilayer epitaxial wafer, there is provided a layer consisting of a semiconductor of different conductivity type from that of the uppermost layer and having a V-shaped groove filled with a semiconductor zone of the same conductivity type as that of the uppermost layer, and ohmic electrodes are provided on the back surface of the substrate of the semiconductor laser, the semiconductor layer of different conductivity type and the semiconductor zone of the same conductivity type.

REFERENCES:
patent: 3892608 (1975-07-01), Kuhn
patent: 4099999 (1978-07-01), Burnham et al.
patent: 4466173 (1984-08-01), Baliga
patent: 4507849 (1985-04-01), Shinozaki
patent: 4509996 (1985-04-01), Greene et al.
patent: 4521888 (1985-06-01), Hayashi et al.
patent: 4542512 (1985-09-01), Van Den Beemt
Mori et al., "V-DH Laser: V-Shaped", Electronics Letters, 25th Sep. 1980, vol. 16, No. 20, pp. 785-787.

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