Process for the production of a field effect transistor using a

Details Process for the production of a field effect transistor using a Process for the production of a field effect transistor using a

1990-09-21

1991-08-06

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

148DIG20, 437 81, 437105, 437126, 437912, H01L 21265

Patent

active

050377701

ABSTRACT:
In a field effect transistor, nonalloyed ohmic source-drain contacts (7, 8) are made possible, as the channel layer (3) is coated with lanthanide-arsenide which serves as contact-mediating layer and is covered with a very thin, conducting, monocrystalline, epitactic gallium-arsenide layer (10) on which nickel (11) is vaporized, an alloying step being dispensed with.

REFERENCES:
patent: 4339302 (1982-07-01), Faktor et al.
patent: 4882206 (1989-11-01), Erbil
Yokotsuka et al., "Schottky Interface Formation Between Lanthanum Heribor and Galliuma Arsenide . . . ", Jpn. J. Appl. Phys. Part 1, 28(6), 1989, pp. 1046-1049.
Bespalov et al., ". . . Influence of Fore-Earth Elements on Properties of Gallium Arsenide . . . ", Kratk. Soobshch. Fiz., (9), 1987, pp. 32-34.
Bennett et al., ". . . Rare Earth Epitaxial Structures Grown by MBE onto (III) Gallium Arsenide", Mater. Res. Soc. Symp. Proc., 151, 1989, pp. 277-282.

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