Process for the preparation of silicon wafers having a controlle

Details Process for the preparation of silicon wafers having a controlle Process for the preparation of silicon wafers having a controlle

1997-09-22

1999-03-16

Bowers, Charles

Semiconductor device manufacturing: process

Gettering of substrate

By implanting or irradiating

438471, 148DIG24, 148DIG60, H01L 21322

Patent

active

058829890

ABSTRACT:
A process for the preparation of silicon wafers having a non-uniform distribution of oxygen precipitate nucleation centers. Silicon wafers having a controlled distribution of oxygen precipitate nucleation centers are prepared by heating the wafer in a manner to create a temperature gradient across the thickness of the wafer for a period of time. Upon a subsequent oxygen precipitation heat treatment, those regions of the wafer which were rapidly heated to a temperature in excess of about 900.degree. C. will form a denuded zone whereas those regions of the wafer which did not achieve a temperature in excess of about 900.degree. C. during the rapid heating will form oxygen precipitates.

REFERENCES:
patent: 4376567 (1983-03-01), Nagasawa et al.
patent: 4417943 (1983-11-01), Jacques et al.
patent: 4436577 (1984-03-01), Frederick et al.
patent: 4437922 (1984-03-01), Bischoff et al.
patent: 4511428 (1985-04-01), Ghosh et al.
patent: 4548654 (1985-10-01), Tobin
patent: 4851358 (1989-07-01), Huber
patent: 5593494 (1997-01-01), Falster
patent: 5674756 (1997-10-01), Satoh et al.
Grovenor, Microelectronic Materials, Adam Hilger, pp. 74-75 (no month given), 1989.

Affiliated with

Also associated with

Rating

Process for the preparation of silicon wafers having a controlle does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for the preparation of silicon wafers having a controlle, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for the preparation of silicon wafers having a controlle will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-817219