Process for the preparation of silicon nitride low in carbon con

Chemistry of inorganic compounds – Silicon or compound thereof – Binary compound

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423406, C01B 21063, C01B 3306

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047987146

ABSTRACT:
An improved process for preparation of silicon nitride powder having a low carbon content comprises treating silicon nitride powder with an atmosphere containing chlorine gas at temperatures from 600.degree. to 1050.degree. C. and then with an atmosphere containing gaseous oxygen.

REFERENCES:
patent: 4122152 (1978-10-01), Mori et al.
patent: 4428916 (1979-09-01), Komeya et al.
patent: 4572902 (1986-02-01), Matano et al.
Chemical Abstracts, Book 98, No. 8, Feb. 21, 1983.
Chemical Abstracts, Book 104, No. 4, Jan. 27, 1986.
Chemical Abstracts, Book 100, No. 26, Jun. 25, 1984.

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