Process for the preparation of silicon nitride having a small cr

Details Process for the preparation of silicon nitride having a small cr Process for the preparation of silicon nitride having a small cr

1992-04-13

1993-09-28

Chaudhuri, Olik

Chemistry of inorganic compounds

Silicon or compound thereof

Binary compound

423406, 501 97, C01B 21068

Patent

active

052484904

ABSTRACT:
To prepare silicon nitride having a crystallite size of 40 to 60 nm and a specific surface area according to BET of 21 to 40 m.sup.2 /g, amorphous silicon nitride or amorphous silicon nitridoimide is brought into surface contact with gas containing water vapor or water-containing solvents and the amorphous silicon nitride or amorphous silicon nitridoimide thus surface-contacted is heated under a nitrogen atmosphere at a heating rate of at least 1.degree. C./minute to above the crystallization temperature of .alpha.-silicon nitride, which is above 1100.degree. C.

REFERENCES:
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patent: 4145224 (1979-03-01), Mehalchick et al.
patent: 4399115 (1983-08-01), Sato et al.
patent: 4492765 (1985-01-01), Buljan
patent: 4686095 (1987-08-01), Beckwith et al.
patent: 4859443 (1989-08-01), Marosi
patent: 4983371 (1991-01-01), Pitzer et al.
patent: 5030434 (1991-07-01), Pitzer et al.
Mazdiyasni et al., Journal of the American Ceramic Society, vol. 56, No. 12, Dec. 1973.

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