Process for the preparation of silicon nitride

Chemistry of inorganic compounds – Silicon or compound thereof – Binary compound

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C01B 21068

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active

050750917

ABSTRACT:
The process of preparing silicon nitride is improved by reacting silicon-oxygen compounds and a carbon-containing material in an ammonia or ammonia
itrogen atmosphere at 1300.degree. to 1600.degree. C.

REFERENCES:
patent: 4122152 (1978-10-01), Mori et al.
patent: 4414190 (1983-11-01), Seimiya et al.
patent: 4613490 (1986-09-01), Suzuki et al.
patent: 4619905 (1986-10-01), Natansohn et al.
K. Kijima et al, J. Am. Ceram. Doc., vol. 56, No. 6 (1973), p. 346.
W. Li et al, Ceramic Powders, ed. by P. Vincenzini, 1983, pp. 403-412.
Chem. Abstract 85/35197 (=JP 76/28599).

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