Process for the preparation of silicon carbide whiskers

Details Process for the preparation of silicon carbide whiskers Process for the preparation of silicon carbide whiskers

1988-02-19

1990-02-27

Bell, Mark L.

Compositions: ceramic

Ceramic compositions

Carbide or oxycarbide containing

501 95, 423345, C04B 3556

Patent

active

049046225

ABSTRACT:
The invention relates to a process for the preparation of silicon carbide whiskers by the reaction, in a non-oxidizing atmosphere, at a temperature of at least 1300.degree. C., of a charge composed of a mixture of carbon black and a source of silicon oxide, in which process the carbon black has an oxidability rate (measured by heating in air for 30 minutes at 600.degree. C.) of at least 85%, the silicon oxide source has a grain size of less than 100 .mu.m and the rate of rise in temperature between 1300.degree. and 1600.degree. C. is less than 30.degree. C.min.sup.-1 per minute if a static atmosphere prevails and at most 25.degree. C.min.sup.-1 if gas percolated. A stage of from 5 min to 5 h at 1600.degree. C. is optionally carried out.
The carbon is preferably introduced into the reaction mixture in an over-stoichiometric quantity relative to the silica.
The excess carbon is removed at the end of the reaction by oxidation in air at about 600.degree. C.

REFERENCES:
patent: 4500504 (1985-02-01), Yamamoto
patent: 4690811 (1987-09-01), Kida et al.

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