Chemistry of inorganic compounds – Silicon or compound thereof – Halogen containing
Patent
1993-11-24
1994-09-13
Shaver, Paul F.
Chemistry of inorganic compounds
Silicon or compound thereof
Halogen containing
C01B 3308
Patent
active
053466829
ABSTRACT:
A process is provided by the present invention for the preparation of a partially-substituted fluorosilane represented by the following formula: SiH.sub.n F.sub.4-n wherein n stands for an integer of 1 to 3. The process comprises converting a corresponding partially-substituted chlorosilane represented by the following formula: SiH.sub.n Cl.sub.4-n wherein n has the same meaning as defined above into the partially-substituted fluorosilane by halogen replacement while using a fluorinating agent. The fluorinating agent is zinc fluoride having a water content not higher than 0.2 wt. %. Preferably, the size of crystallites in the direction of a (110) plane of the zinc fluoride is at least 500 .ANG..
REFERENCES:
patent: 2395826 (1946-03-01), Hill et al.
patent: 4457901 (1984-07-01), Kitsugi et al.
Chemical Abstracts, vol. 106, No. 8, Feb. 23, 1987, No. 52738y, p. 148.
Chemical Abstracts, vol. 106, No. 8, Feb. 23, 1987, No. 52737x, p. 148.
Chemical Abstracts, vol. 110, No. 2, Jan. 9, 1989, No. 10689k, p. 140.
Chemical Abstracts, vol. 114, No. 12, Mar. 25, 1991, No. 105234e, p. 171.
Chemical Abstracts, vol. 119, No. 12, Sep. 20, 1993, No. 120683x.
Chemical Abstracts, vol. 119, No. 20, Nov. 15, 1993, No. 206562u.
Aritsuka Makoto
Harada Isao
Mimoto Atsuhisa
Mitsui Toatsu Chemicals Inc.
Shaver Paul F.
LandOfFree
Process for the preparation of partially-substituted fluorosilan does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Process for the preparation of partially-substituted fluorosilan, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for the preparation of partially-substituted fluorosilan will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1118800