Process for the preparation of low temperature silicon nitride f

Details Process for the preparation of low temperature silicon nitride f Process for the preparation of low temperature silicon nitride f

1978-05-24

1980-01-01

Esposito, Michael F.

Coating processes

Electrical product produced

Welding electrode

427 541, 427 94, 427248B, 423344, 423406, C01B 2106, B05D 306

Patent

active

041817516

ABSTRACT:
Low temperature photonitride (LTPN) films of excellent quality have been prepared at temperatures ranging from 300.degree. C. downward to 100.degree. C. by a photochemical vapor deposition process, wherein a mixture of silane, ammonia, and hydrazine is caused to react to form Si.sub.3 N.sub.4 films at the substrate interface. These films are suitable for the preparation of silicon nitride passivation layers on solid-state devices, such as metal-oxide semiconductors (MOS) and charge coupled devices to impart enhanced reliability.

REFERENCES:
patent: 3503798 (1970-03-01), Yoshioka
patent: 4091407 (1978-05-01), Williams et al.
Collet, M. G., J. Electrochemical Soc. "Low Temp . . . Reaction", vol. 116, Pp. 110-111 (1969).
Van der Breckel et al., J. Electrochemical Soc., "Control of Deposition . . . by 2537 A Radiation," vol. 119, P372-376 (1972).

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