Process for the preparation of electroluminescent III-V material

Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal

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148171, 313103R, 357 17, 357 63, 357 90, H10L 21205, H01L 29207

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active

RE0296481

ABSTRACT:
The disclosure herein pertains to the preparation of semiconductor materials and solid-state devices fabricated therefrom. More particularly, the disclosure pertains to a vapor phase process for the preparation of electroluminescent materials, particularly GaAs.sub.1-x P.sub.x, doped with isoelectronic impurities, particularly nitrogen, and to electroluminescent devices fabricated therefrom.

REFERENCES:
patent: 3634872 (1972-01-01), Umeda
patent: 3646406 (1972-02-01), Logan et al.
patent: 3687744 (1972-08-01), Ogirima et al.
Logan et al., "Electroluminescence in GaAs.sub.x P.sub.x1-. . . ", J. Appl. Phys., vol. 42, No. 6, May. 1971, pp. 2328-2335.
Herzog et al., "Electroluminescence of Diffused GaAs.sub.1-x P.sub.x . . .", J. Appl. Phys., vol. 40, No. 4, Mar. 1969, pp. 1830-1838.

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