Superconductor technology: apparatus – material – process – Processes of producing or treating high temperature... – With precipitating from solution
Patent
1990-09-07
1995-10-10
Bell, Mark L.
Superconductor technology: apparatus, material, process
Processes of producing or treating high temperature...
With precipitating from solution
505738, 501152, 501123, C04B 35505, C04B 3545
Patent
active
054570883
ABSTRACT:
To prepare a phase-pure, ceramic oxide superconductor which contains, in addition to copper, at least one alkaline earth metal from the group comprising Ba, Sr and Ca, and at least one metal from the group comprising Y, La, Tl, Pb and the rare earths, for example of YBa.sub.2 Cu.sub.3 O.sub.7-x, a solution is prepared which contains the metal components in the atomic ratios of the superconductor. The metals are precipitated as oxalates by combining this solution with an oxalic acid solution, the mixture of the oxalates is separated off, dried and decomposed to form the oxides, and the latter are subsequently sintered at temperatures of from 700.degree. to 900.degree. C. in the presence of oxygen to form the superconductor. In this process, the heating of the metal oxalates and the oxides formed therefrom up to 700.degree. C. is carried out at a maximum oxygen partial pressure of 50 mbar, preferably in an inert gas.
REFERENCES:
patent: 4804649 (1989-02-01), Sherif
patent: 4898851 (1990-02-01), Michel
patent: 4923849 (1990-05-01), Sherif
patent: 4956340 (1990-09-01), Kimura et al.
"Synthesis of Superconductive Oxides by Vacuum Calcination Method" Uno et al.--Jap. J. of App. Phys. pp. L1003-L1006 vol. 27, No. 6, Jun. 1988.
"Effect of Residual Water on Superconductivity in (La.sub.1-x Sr.sub.x).sub.2 CuO.sub.4-8 " Kisnio et al. Jap. J. of Applied Phys. vol. 26 #4 Apr. 1987 pp. L466-L467.
Journal of the American Ceramic Society, vol. 72, No. 4, Apr. 1989, pp. 696-698, K. W. Lang: "Formation of Yttrium Barium Cuprate Powder at Low Temperatures".
Bell Mark L.
Bonner C. M.
Hoechst Aktiengesellschaft
LandOfFree
Process for the preparation of a semiconductor from an oxalate does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Process for the preparation of a semiconductor from an oxalate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for the preparation of a semiconductor from an oxalate will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2310455