Process for the preparation of a high dielectric thin film using

Details Process for the preparation of a high dielectric thin film using Process for the preparation of a high dielectric thin film using

1992-05-28

1994-05-17

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437225, 437228, 437243, H01L 2100, H01L 2102, H01L 21302, H01L 21463

Patent

active

053127838

ABSTRACT:
A process for the preparation of a high dielectric thin film. A tantalum oxide film is formed on a substrate at a temperature of from 400.degree. to 850.degree. C. by means of an electron cyclotron resonance plasma chemical vapor deposition (ECR plasma CVD) method. A high dielectric film having little leakage current, good surface flatness and good step coverage is obtained.

REFERENCES:
patent: 4492620 (1985-01-01), Matsuo et al.

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